(China (Mainland))
Product Summary
The BD237STU is a medium power switch.
Parametrics
BD237STU absolute maximum ratings: (1)Collector-Base Voltage=100V; (2)Collector-Emitter Voltage=80V; (3)Collector-Emitter Voltage=100V;(4)Emitter-Base Voltage,5V; (5)Collector Current (DC),2A; (6)Collector Current (Pulse),6A; (7)Collector Dissipation (TC=25℃),25W; (8) Junction Temperature,150℃.
Features
BD237STU features:(1)Collector-Emitter Sustaining Voltage:80V; (2)Collector Cut-off Current:100μA;(3)Emitter Cut-off Current:1mA; (4)Collector-Emitter Saturation Voltage:0.6V; (5)Base-Emitter ON Voltage:1.3V; (6)Current Gain Bandwidth Product:3MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BD237STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BD233STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
Negotiable |
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BD234 |
ON Semiconductor |
Transistors Bipolar (BJT) 2A 45V 25W PNP |
Data Sheet |
Negotiable |
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BD234G |
ON Semiconductor |
Transistors Bipolar (BJT) 2A 45V 25W PNP |
Data Sheet |
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BD239BTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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BD237G |
ON Semiconductor |
Transistors Bipolar (BJT) 2A 80V 25W NPN |
Data Sheet |
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BD237STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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