Product Summary
The FM24C04A-GTR is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. The FM24C04A-GTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C04A-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately. The FM24C04A-GTR provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The device is available in industry standard 8-pin packages using a two-wire protocol. The specifications are guaranteed over an industrial temperature range of -40 to +85℃.
Parametrics
FM24C04A-GTR absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN, Voltage on any signal pin with respect to VSS: -1.0V to +7.0V; (3)and VIN < VDD+1.0V; (4)TSTG, Storage Temperature: -55 to + 125℃; (5)TLEAD, Lead Temperature (Soldering, 10 seconds): 300℃; (6)VESD, Electrostatic Discharge Voltage: 3kV; (7)Package Moisture Sensitivity Level: MSL-1.
Features
FM24C04A-GTR features: (1)4K bit Ferroelectric Nonvolatile RAM: Organized as 512 x 8 bits; High Endurance 1012 Read/Writes; 45 Year Data Retention; NoDelay Writes; Advanced High-Reliability Ferroelectric Process; (2)Fast Two-wire Serial Interface: Up to 1 MHz maximum bus frequency; Direct hardware replacement for EEPROM; (3)Low Power Operation: 5V operation; 150μA Active Current (100 kHz); 10μA Standby Current; (4)Industry Standard Configuration: Industrial Temperature -40 to +85℃; 8-pin Green RoHS SOIC (-G).
Diagrams
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![]() F-RAM 4K (512x8) 5V |
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