(China (Mainland))
Product Summary
The MRF7S18170H is a RF power field effect transistor. It is designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. It is suitable for CDMA and multicarrier amplifier applications.
Parametrics
MRF7S18170H absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature TJ: 225 ℃.
Features
MRF7S18170H features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)Designed for Digital Predistortion Error Correction Systems; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF7S18170HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 1.8GHZ HV7 WCDMA NI880H |
Data Sheet |
Negotiable |
|
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|
MRF7S18170HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 1.8GHZ HV7 WCDMA NI880H |
Data Sheet |
Negotiable |
|
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|
MRF7S18170HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.8GHZ 50W |
Data Sheet |
|
|
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|
MRF7S18170HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV7 1.8GHZ 50W |
Data Sheet |
Negotiable |
|
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