(China (Mainland))
Product Summary
The SPP11N60C3 is a Cool MOS Power Transistor.
Parametrics
SPP11N60C3 absolute maximum ratings: (1)Continuous drain current: 11 A at TC = 25 ℃; (2)Pulsed drain current, tp limited by Tjmax: 33 A; (3)Avalanche energy, single pulse: 340 mJ at ID=5.5A, VDD=50V; (4)Avalanche energy, repetitive tAR limited by Tjmax: 0.6 mJ at ID=11A, VDD=50V; (5)Avalanche current, repetitive tAR limited by Tjmax: 11 A; (6)Gate source voltage static: ±20 V; (7)Gate source voltage AC (f >1Hz): ±30 V; (8)Power dissipation, TC = 25℃: 33 W; (9)Operating and storage temperature: -55 to +150 ℃.
Features
SPP11N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
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 SPP11N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 11A |
Data Sheet |
Negotiable |
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SPP11N60C3XKSA1 |
Infineon Technologies |
MOSFET |
Data Sheet |
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