Product Summary
The MRF377 is a RF Power Field-Effect Transistor. It is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of the MRF377 make it ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.
Parametrics
MRF377 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Drain Current - Continuous ID: 17 Adc; (4)Total Device Dissipation @ TC = 25℃, PD: 486W; Derate above 25℃: 2.78W/℃; (5)Storage Temperature Range, Tstg: -65 to +150℃; (6)Operating Junction Temperature, TJ: 200℃.
Features
MRF377 features: (1)Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM; (2)Output Power . 45 Watts Avg; (3)Power Gain ≥ 16.7 dB; (4)Efficiency ≥ 21%; (5)ACPR ≤ -58 dBc; (6)Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts, IDQ = 2.0 A; (7)Output Power: 80 Watts Avg; (8)Power Gain ≥ 16.5 dB; (9)Efficiency ≥ 27.5%; (10)IMD ≤ -31.3 dBc; (11)Internally Input and Output Matched for Ease of Use; (12)Integrated ESD Protection; (13)Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45Watts DVBT OFDM Output Power; (14)Excellent Thermal Stability; (15)Characterized with Series Equivalent Large-Signal Impedance Parameters; (16)Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel..
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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MRF377 |
Other |
Data Sheet |
Negotiable |
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MRF377H |
Other |
Data Sheet |
Negotiable |
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MRF377HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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MRF377R3 |
Other |
Data Sheet |
Negotiable |
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MRF377R5 |
Other |
Data Sheet |
Negotiable |
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MRF377HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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