(China (Mainland))
Product Summary
The NIF5003NT1G is a Self-Protected FET with Temperature and Current Limit. It utilizes ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits of the NIF5003NT1G work together to provide short circuit protection. The NIF5003NT1G features an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients.
Parametrics
NIF5003NT1G absolute maximum ratings: (1)Drain-to-Source Voltage Internally Clamped:42 Vdc; (2)Gate-to-Source Voltage:±14 Vdc; (3)Drain Current Continuous:Internally Limited; (4)Total Power Dissipation :@ TA = 25℃:1.25W, @ TA = 25℃:1.9W; (5)Thermal Resistance: Junction-to-ase:12℃/W,Junction-to-Ambient:100℃/W, Junction-to-Ambient:65℃/W; (6)Single Pulse Drain-to-Source Avalanche Energy:400 mJ; (7)Operating and Storage Temperature Range:-55℃ to 150℃.
Features
NIF5003NT1G features: (1)Short Circuit Protection/Current Limit; (2)Thermal Shutdown with Automatic Restart; (3)IDSS Specified at Elevated Temperature; (4)Avalanche Energy Specified; (5)Slew Rate Control for Low Noise Switching; (6)Overvoltage Clamped Protection; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NIF5003NT1G |
ON Semiconductor |
MOSFET 42V 14A N-Channel |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||
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NIF5002N |
Other |
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Data Sheet |
Negotiable |
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NIF5002NT1 |
ON Semiconductor |
MOSFET 42V 2A N-Channel |
Data Sheet |
Negotiable |
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NIF5002NT1G |
ON Semiconductor |
MOSFET 42V 2A N-Channel |
Data Sheet |
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NIF5002NT3 |
ON Semiconductor |
MOSFET 42V 2A N-Channel |
Data Sheet |
Negotiable |
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NIF5002NT3G |
ON Semiconductor |
MOSFET NFET 1.4A 40V HD+ |
Data Sheet |
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NIF5003NT1 |
ON Semiconductor |
MOSFET 42V 14A N-Channel |
Data Sheet |
Negotiable |
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