(China (Mainland))
Product Summary
The STB80NF03L-04 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor of STB80NF03L-04 shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The applications of the STB80NF03L-04 include high current, high speed switching, motor control, audio amplifiers, DC-DC & DC-AC converters, automotive environment (injection, ABS, AIR-BAG, lampdrivers, Etc. )
Parametrics
STB80NF03L-04 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 30 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 30 V; (3)VGS Gate-source Voltage: ±20 V; (4)ID Drain Current (continuous) at Tc = 25 ℃: 80 A; (5)ID Drain Current (continuous) at Tc = 100 ℃: 56 A; (6)IDM(Drain Current (pulsed): 320 A; (7)Ptot Total Dissipation at Tc = 25 ℃: 210 W; (8)Derating Factor: 1.43 W/℃; (9)dv/dt Peak Diode Recovery voltage slope: 3.5 V/ns; (10)Ts tg Storage Temperature: -65 to 175 ℃; (11)Tj Max. Operating Junction Temperature: 175 ℃.
Features
STB80NF03L-04 features: (1)typical RDS(on) = 0.0035 W; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)low threshold drive; (5)through-hole I2PAK (TO-262) power packagein tube (SUFFIX "-1"); (6)surface-mounting D2PAK (TO-263) powerpackage in tube (NO SUFFIX) or in tape & reel (SUFFIX "T4").
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STB80NF03L-04 |
STMicroelectronics |
MOSFET N-Ch 30 Volt 80 Amp |
Data Sheet |
Negotiable |
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STB80NF03L-04-1 |
STMicroelectronics |
MOSFET N-Ch, 30V-0.0035ohms 80A |
Data Sheet |
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STB80NF03L-04T4 |
STMicroelectronics |
MOSFET N-Ch 30 Volt 80 Amp |
Data Sheet |
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