(China (Mainland))
Product Summary
The 2SC2905-01 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. The device is suitable for output stage of trnasmitter in HF band SSB mobile radio sets.
Parametrics
2SC2905-01 absolute maximum ratings: (1)VCBO, collector to base voltage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 15A; (5)PC, collector dissipation: 120W at Ta=25℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃.
Features
2SC2905-01 features: (1)high gain: Gpe≥4.8dB at VCC=12.5V, Po≥45W, f=520MHz; (2)high ruggedness: ability to withstand 20:1 load VSWR when operated at f=520MHz, Po=45W, VCC=15.2V; (3)emitter ballansted construction; (4)low thermal resistance ceramic package with flange.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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