Product Summary

The BLF578 is a 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Parametrics

BLF578 absolute maximum ratings: (1)VDS drain-source voltage: 110 V; (2)VGS gate-source voltage: -0.5 +11 V; (3)ID drain current: 112 A; (4)Tstg storage temperature: -65 +150 ℃; (5)Tj junction temperature: 225 ℃.

Features

BLF578 features: (1)Easy power control; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operatio(10 MHz to 500 MHz); (7)Compliant to Directive 2002/95/EC, regarding Restrictioof Hazardous Substances(RoHS).

Diagrams

BLF578 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF578,112
BLF578,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS
Data Sheet
0-42: $187.82
BLF578XR,112
BLF578XR,112
NXP Semiconductors
Transistors RF MOSFET Power Pwr LDMOS transistor transistor
Data Sheet
0-45: $172.80
45-100: $168.53
BLF578XRS,112
BLF578XRS,112
NXP Semiconductors
Transistors RF MOSFET Power 500MHz 110V 23.5dB
Data Sheet
0-45: $172.80
BLF578
BLF578
NXP Semiconductors
Transistors RF MOSFET Power 1200W, HF-500MHz
Data Sheet
Negotiable