Product Summary

The BLF578 is a 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Parametrics

BLF578 absolute maximum ratings: (1)VDS drain-source voltage: 110 V; (2)VGS gate-source voltage: -0.5 +11 V; (3)ID drain current: 112 A; (4)Tstg storage temperature: -65 +150 ℃; (5)Tj junction temperature: 225 ℃.

Features

BLF578 features: (1)Easy power control; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operatio(10 MHz to 500 MHz); (7)Compliant to Directive 2002/95/EC, regarding Restrictioof Hazardous Substances(RoHS).

Diagrams

BLF578 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF578
BLF578
NXP Semiconductors
Transistors RF MOSFET Power 1200W, HF-500MHz
Data Sheet
Negotiable 
BLF578,112
BLF578,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS
Data Sheet
0-42: $187.82
BLF578XR,112
BLF578XR,112
NXP Semiconductors
Transistors RF MOSFET Power Pwr LDMOS transistor transistor
Data Sheet
0-45: $172.80
45-100: $168.53
BLF578XRS,112
BLF578XRS,112
NXP Semiconductors
Transistors RF MOSFET Power 500MHz 110V 23.5dB
Data Sheet
0-45: $172.80