Product Summary

The BU508A is a high voltage fast-switching NPN power transistor. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

Parametrics

Absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 oC: 125 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.

Features

Features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BU508AF
BU508AF
STMicroelectronics
Transistors Switching (Resistor Biased) NPN Power Transistor
Data Sheet
0-1: $0.67
1-10: $0.61
10-100: $0.57
100-250: $0.56
BU508AFTBTU
BU508AFTBTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon
Data Sheet
Negotiable 
BU508AX
BU508AX
Other

Data Sheet
Negotiable 
BU508AW
BU508AW
STMicroelectronics
Transistors Bipolar (BJT) Hi Vltg NPN Pwr transistor
Data Sheet
0-1: $1.69
1-10: $1.36
10-100: $1.24
100-250: $1.12
BU508AFI
BU508AFI
STMicroelectronics
Transistors Bipolar (BJT) NPN General Purpose
Data Sheet
Negotiable 
BU508A
BU508A
STMicroelectronics
Transistors Bipolar (BJT) NPN General Purpose
Data Sheet
Negotiable