Product Summary

The BU508A is a high voltage fast-switching NPN power transistor. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

Parametrics

Absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 oC: 125 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.

Features

Features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BU508AF
BU508AF

STMicroelectronics

Transistors Switching (Resistor Biased) NPN Power Transistor

Data Sheet

0-1: $0.67
1-10: $0.61
10-100: $0.57
100-250: $0.56
BU508AFI
BU508AFI

STMicroelectronics

Transistors Bipolar (BJT) NPN General Purpose

Data Sheet

Negotiable 
BU508AFTBTU
BU508AFTBTU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon

Data Sheet

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BU508AX
BU508AX

Other


Data Sheet

Negotiable 
BU508AW
BU508AW

STMicroelectronics

Transistors Bipolar (BJT) Hi Vltg NPN Pwr transistor

Data Sheet

0-1: $1.69
1-10: $1.36
10-100: $1.24
100-250: $1.12
BU508A
BU508A

STMicroelectronics

Transistors Bipolar (BJT) NPN General Purpose

Data Sheet

Negotiable