(China (Mainland))
Product Summary
The HAT2036RJ is a Silicon N Channel Power MOS FET.
Parametrics
HAT2036RJ absolute maximum ratings: (1)Drain to source voltage, VDSS: 30 V; (2)Gate to source voltage, VGSS: ±20 V; (3)Drain current, ID: 12 A; (4)Drain peak current, ID (pulse): 96 A; (5)Body-drain diode reverse drain current, IDR: 12 A; (6)Channel dissipation, Pch: 2.5 W; (7)Channel temperature, Tch: 150℃; (8)Storage temperature, Tstg: –55 to +150℃.
Features
HAT2036RJ features: (1)Low on-resistance RDS (on) = 12 mΩ typ; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)High speed switching tf = 60 ns typ.
Diagrams
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 HAT2016R |
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HAT2019R |
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HAT2020R |
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HAT2022R |
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HAT2024R |
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HAT2025R |
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