Product Summary
The LT1001A is a NPN silicon high frequency transistor. It is designed for High Gain Low Noise CATV, and MATV Amplifier Applications.
Parametrics
LT1001A absolute maximum ratings: (1)IC: 200 mA; (2)VCE: 20 V; (3)PDISS: 2.5 W @ TC = 50 ℃; (4)TJ: -65 ℃ to +200 ℃; (5)TSTG: -65 ℃ to +200 ℃; (6)θJC: 70 ℃/W.
Features
LT1001A characteristics: (1)On the condition of IC = 5.0 mA, BVCEO: min=20 V; (2)On the condition of IC = 1.0 mA, BVCBO: min=40 V; (3)On the condition of IE = 100 μA, BVEBO: min=3.5 V; (4)On the condition of VCB = 10 V, ICBO: max=50 μA; (5)On the conditions of VCE = 5.0 V IC = 50 mA, hFE: min=70, max=300; (6)On the conditions of IC = 50 mA IB = 5.0 mA, VCE(SAT): typ=500 mV; (7)On the conditions of VCE = 14 V IC = 90 mA f = 300 MHz, ft: typ=3.0 GHz.
Diagrams
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![]() LT1001A |
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![]() LT1001ACH |
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![]() PRECISION OP AMP |
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![]() LT1001ACN8#PBF |
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![]() IC PRECISION OP-AMP SINGLE 8-DIP |
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![]() LT1001ACN8 |
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![]() IC PRECISION OP-AMP SINGLE 8-DIP |
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![]() LT1001ACJ8 |
![]() Linear Technology |
![]() IC PREC OPAMP 8-CDIP |
![]() Data Sheet |
![]() Negotiable |
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