Product Summary
The MHL21336 is a RF linear LDMOS amplifier. It is designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design of MHL21336 provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
Parametrics
MHL21336 absolute maximum ratings: (1)DC Supply Voltage VDD: 30 Vdc; (2)RF Input Power Pin: +5 dBm; (3)Storage Temperature Range Tstg: - 40 to +100 ℃; (4)Operating Case Temperature Range TC: - 20 to +100 ℃.
Features
MHL21336 features: (1)Excellent Phase Linearity and Group Delay Characteristics; (2)Ideal for Feedforward Base Station Applications; (3)N Suffix Indicates Lead-Free Terminations.
Diagrams
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![]() MHL2ACLTE10NJ |
![]() KOA Speer |
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![]() MHL2ACLTE12NJ |
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![]() Power Inductors 12nH 5% |
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![]() MHL2ACLTE15NJ |
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![]() Power Inductors 15nH 5% |
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![]() Negotiable |
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![]() MHL2ACLTE18NJ |
![]() KOA Speer |
![]() Power Inductors 18nH 5% |
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![]() MHL2ACLTE1N5S |
![]() KOA Speer |
![]() Power Inductors 1.5nH +/-0.3nH |
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