(China (Mainland))
Product Summary
The MHW916 is an UHF silicon FET power amplifier. It is designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. The MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power.
Parametrics
MHW916 absolute maximum ratings: (1)DC Supply Voltage VS: 28 Vdc; (2)DC Bias Voltage VB: 16 Vdc; (3)RF Input Power Pin: 19 dBm; (4)RF Output Power Pout: 25 W; (5)Operating Case Temperature Range TC: – 5.0 to +85 ℃; (6)Storage Temperature Range Tstg: – 30 to +100 ℃; (7)Standby Current (Pin Removed, Istdby = IS1 + IS2) Istdby: 400 mA.
Features
MHW916 features: (1)Specified 26 Volt Characteristics; (2)RF Input Power: 15.5 dBm Max; (3)RF Output Power: 16 Watts at 1.0 dB Compression Point; (4)Minimum Gain: 26.5 dB; (5)Harmonics: -35 dBc Max at 2Fo; (6)50 W Input/Output System; (7)Meet GSM Linearity Specification for Base Station up to 12.5 Watts.
Diagrams
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 MHW916 |
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Data Sheet |
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MHW903 |
Other |
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MHW912 |
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Data Sheet |
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Data Sheet |
Negotiable |
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MHW9146N |
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Data Sheet |
Negotiable |
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