(China (Mainland))
Product Summary
The MRF6S19100NR1 is a RF Power Field Effect Transistor. It is designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA and multicarrier amplifier applications. MRF6S19100NR1 is used in Class AB for PCN - PCS/cel lular radi o and WLL applications.
Parametrics
MRF6S19100NR1 absolute maximum ratings: (1)Drain-Source Voltage:-0.5V to +68V; (2)Gate-Source Voltage:-0.5V to +12V; (3)Storage Temperature Range:-65℃ to +150℃; (4)total device dissipation: 287W; (5)Operating Junction Temperature:200℃.
Features
MRF6S19100NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)N Suffix Indicates Lead-Free Terminations; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)200℃ Capable Plastic Package; (8)RoHS Compliant; (9)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRF6S19100NR1 |
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Negotiable |
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