Product Summary
The MRF6S19100NR1 is a RF Power Field Effect Transistor. It is designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA and multicarrier amplifier applications. MRF6S19100NR1 is used in Class AB for PCN - PCS/cel lular radi o and WLL applications.
Parametrics
MRF6S19100NR1 absolute maximum ratings: (1)Drain-Source Voltage:-0.5V to +68V; (2)Gate-Source Voltage:-0.5V to +12V; (3)Storage Temperature Range:-65℃ to +150℃; (4)total device dissipation: 287W; (5)Operating Junction Temperature:200℃.
Features
MRF6S19100NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)N Suffix Indicates Lead-Free Terminations; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)200℃ Capable Plastic Package; (8)RoHS Compliant; (9)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() MRF6S19100NR1 |
![]() Freescale Semiconductor |
![]() Transistors RF MOSFET Power 1990MHZ 22W |
![]() Data Sheet |
![]() Negotiable |
|
||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
![]() |
![]() MRF607 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() MRF616 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() MRF627 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() MRF630 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() MRF6414 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() MRF650 |
![]() TriQuint Semiconductor |
![]() RF Amplifier RF Bipolar Trans |
![]() Data Sheet |
![]() Negotiable |
|