(China (Mainland))
Product Summary
The MRFE6S9200HR3 is an N-Channel Enhancement -Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRFE6S9200HR3 make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9200HR3 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +12 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature TJ: 225℃.
Features
MRFE6S9200HR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Qualified Up to a Maximum of 32 VDD Operation; (5)Integrated ESD Protection; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRFE6S9200HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI880H |
Data Sheet |
Negotiable |
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Pricing (USD) |
Quantity | ||||||||
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MRFE6P3300HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
Negotiable |
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Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
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MRFE6S8046NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
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MRFE6S9045GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 45W TO270-2G |
Data Sheet |
Negotiable |
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