(China (Mainland))
Product Summary
The BDX54F is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. The BDX54F is intented for use in power linear and switching applications.
Parametrics
BDX54F absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 160 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 160 V; (3)VEBO Emitter-base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current: 12 A; (6)IB Base Current: 0.2 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 60 W; (8)Tstg Storage Temperature: -65 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.
Features
BDX54F features: (1)STMicroelectronics preferred salestype; (2)Monolithic darlingtoconfiguration; (3)Integrated antiparallel collector-emitter diode.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BDX54F |
STMicroelectronics |
Transistors Darlington PNP Power Darlington |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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BDX53 |
Bourns |
Transistors Darlington 60W 8A NPN |
Data Sheet |
Negotiable |
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BDX53A |
Bourns |
Transistors Darlington 60W 8A NPN |
Data Sheet |
Negotiable |
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BDX53A-S |
Bourns |
Transistors Darlington 60V 8A NPN |
Data Sheet |
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BDX53ATU |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil |
Data Sheet |
Negotiable |
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BDX53B |
STMicroelectronics |
Transistors Darlington NPN Power Darlington |
Data Sheet |
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BDX53BFP |
STMicroelectronics |
Transistors Darlington Silicon Pwr Trnsistr |
Data Sheet |
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