Product Summary
The BLF177 is a Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook General section for further information.
Parametrics
BLF177 absolute maximum ratings: (1)VDS drain:source voltage : 125 V; (2)VGS gate:source voltage : ±20 V; (3)ID drain current (DC) : 16 A; (4)Ptot total power dissipation: 220 W; (5)Tstg storage temperature : -65 +150 ℃; (6)Tj junction temperature : 200 ℃.
Features
BLF177 features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BLF177 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF177,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W HF-VHF |
Data Sheet |
|
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BLF177C |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177C,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
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BLF177CR |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
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BLF177CR,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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