(China (Mainland))
Product Summary
The IXFR90N30 is a HiPerFET Power MOSFET. The applications of the IXFR90N30 are: DC-DC converters; Battery chargers; Switched-mode and resonant-mode power supplies; DC choppers; AC & DC motor control. The advantages of the IXFR90N30 are: Easy assembly. Space savings. High power density. Low noise to ground.
Parametrics
IXFR90N30 maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 300 V; (2)VDGR TJ = 25℃ to 150℃; RGS = 1 MΩ: 300 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±30 V; (5)ID25 TC = 25℃: 75 A; (6)IDM TC = 25℃:360 A; (7)IAR TC = 25℃: 90 A; (8)EAR TC = 25℃: 64 mJ; (9)EAS TC = 25℃: 3 J; (10)dv/dt IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ TJ ≤ 150℃, RG = 2 Ω VDSS: 5 V/ns; (11)PD TC = 25℃: 400 W.
Features
IXFR90N30 features: (1)Silicon chip on Direct-Copper-Bond substrate. High power dissipation. Isolated mounting surface. 2500V electrical isolation; (2)Low drain to tab capacitance(<30pF); (3)Low RDS (on) HDMOSTM process; (4)Rugged polysilicon gate cell structure; (5)Unclamped Inductive Switching (UIS) rated; (6)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IXFR90N30 |
Ixys |
MOSFET 75 Amps 300V 0.033 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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IXFR 26N50 |
Other |
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Data Sheet |
Negotiable |
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IXFR102N30P |
Ixys |
MOSFET 54 Amps 300V 0.033 Rds |
Data Sheet |
Negotiable |
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|
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Ixys |
MOSFET 12 Amps 1000V 1 Rds |
Data Sheet |
Negotiable |
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IXFR150N15 |
Ixys |
MOSFET 105 Amps 150V 0.0125 Rds |
Data Sheet |
Negotiable |
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IXFR16N80P |
Ixys |
MOSFET Polar HiPer |
Data Sheet |
Negotiable |
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Ixys |
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds |
Data Sheet |
Negotiable |
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