Product Summary

The SPP11N60 is a Cool MOS power transistor.

Parametrics

SPP11N60 absolute maximum ratings: (1)Avalanche energy, single pulse ID=5.5A, VDD=50V EAS: SPP-B=340mJ, SPA=340mJ; (2)Avalanche energy, repetitive tAR limited by Tjmax ID=11A, VDD=50V EAR: SPP-B=0.6mJ, SPA=0.6mJ; (3)Avalanche current, repetitive tAR limited by Tjmax IAR: SPP-B=11A, SPA=11A; (4)Reverse diode dv/dt IS = 11A, VDS < VDD, di/dt=100A/μs, Tjmax=150℃ dv/dt: SPP-B=6V/ns, SPA=6V/ns; (5)Gate source voltage VGS: SPP-B=±20V, SPA=±2 V; (6)Gate source voltage AC (f >1Hz) VGS: SPP-B=±30V, SPA=±30V; (7)Power dissipation, TC = 25℃ Ptot: SPP-B=125W, SPA=33W; (8)Operating and storage temperature Tj , Tstg: -55 ~+150 ℃.

Features

SPP11N60 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances.

Diagrams

SPP11N60 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPP11N60C2
SPP11N60C2
Other

Data Sheet
Negotiable 
SPP11N60C3
SPP11N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
Negotiable 
SPP11N60C3XKSA1
SPP11N60C3XKSA1
Infineon Technologies
MOSFET
Data Sheet
0-1: $2.00
1-10: $1.72
10-100: $1.28
100-500: $1.00
SPP11N60CFD
SPP11N60CFD

MOSFET N-CH 650V 11A TO-220
Data Sheet
0-500: $1.09
SPP11N60S5
SPP11N60S5
Infineon Technologies
MOSFET COOL MOS
Data Sheet
Negotiable 
SPP11N60S5XKSA1
SPP11N60S5XKSA1
Infineon Technologies
MOSFET
Data Sheet
0-1: $1.81
1-10: $1.61
10-100: $1.32
100-500: $1.07