Product Summary

The SPP11N60 is a Cool MOS power transistor.

Parametrics

SPP11N60 absolute maximum ratings: (1)Avalanche energy, single pulse ID=5.5A, VDD=50V EAS: SPP-B=340mJ, SPA=340mJ; (2)Avalanche energy, repetitive tAR limited by Tjmax ID=11A, VDD=50V EAR: SPP-B=0.6mJ, SPA=0.6mJ; (3)Avalanche current, repetitive tAR limited by Tjmax IAR: SPP-B=11A, SPA=11A; (4)Reverse diode dv/dt IS = 11A, VDS < VDD, di/dt=100A/μs, Tjmax=150℃ dv/dt: SPP-B=6V/ns, SPA=6V/ns; (5)Gate source voltage VGS: SPP-B=±20V, SPA=±2 V; (6)Gate source voltage AC (f >1Hz) VGS: SPP-B=±30V, SPA=±30V; (7)Power dissipation, TC = 25℃ Ptot: SPP-B=125W, SPA=33W; (8)Operating and storage temperature Tj , Tstg: -55 ~+150 ℃.

Features

SPP11N60 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances.

Diagrams

SPP11N60 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPP11N60C3
SPP11N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 600V 11A
Data Sheet
Negotiable 
SPP11N60C3XKSA1
SPP11N60C3XKSA1
Infineon Technologies
MOSFET
Data Sheet
0-1: $2.00
1-10: $1.72
10-100: $1.28
100-500: $1.00
SPP11N60S5
SPP11N60S5
Infineon Technologies
MOSFET COOL MOS
Data Sheet
Negotiable 
SPP11N60S5XKSA1
SPP11N60S5XKSA1
Infineon Technologies
MOSFET
Data Sheet
0-1: $1.81
1-10: $1.61
10-100: $1.32
100-500: $1.07
SPP11N60CFD
SPP11N60CFD

MOSFET N-CH 650V 11A TO-220
Data Sheet
0-500: $1.09
SPP11N60C2
SPP11N60C2
Other

Data Sheet
Negotiable